| PART |
Description |
Maker |
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BC327-16 BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
|
| SMBT2222AE6327HTSA1 |
Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SA1980UF |
Low collector saturation voltage. Low output capacitance.
|
TY Semiconductor Co., Ltd
|
| 2SC5343UF |
Low collector saturation voltage : VCE=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.)
|
TY Semiconductor Co., L...
|
| SMBTA5607 |
PNP Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| SMBTA06 SMBTA0607 |
NPN Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SC5343SF |
Low collector saturation voltage: VCE=0.25V(Max.) Low output capacitance:Cob=2pF(Typ.)
NPN Silicon Transistor
|
TY Semiconductor Co., Ltd
TY Semicondutor
|
| 2SA1729 |
Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.
|
TY Semiconductor Co., Ltd
|
| 2SD1623 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
